SiC/Si Hybrid Substrate Synthesized by the Method of Coordinated Substitution of Atoms: A New Type of Substrate for LEDs

This paper proposes a new type of substrate for manufacturing LEDs based on AlInGaN heterostructures. Instead depositing SiC layers the surface Si using conventional method, method involving coordinated substitution atoms (MCSA) to form layer is proposed. approach enables growth epitaxial GaN with low defect content and facilitates transfer any surface. The details technology SiC/Si substrates obtained by MCSA elaborates benefits these in LED production. Additionally, advantages interface between materials are discussed. Moreover, it found that thinner (<200 nm) contribute scattering LED’s own radiation heterostructure waveguide, which decreases its absorption silicon. For flip-chip removed, thicker (~400 porous several microns at SiC-Si utilized simplify removal enhance process’s cost-effectiveness.